| 摘要 |
<p>A tungsten layer is formed on the surface of a substance to be treated (e.g. semiconductor wafer) while a treating gas containing a material gas consisting of tungsten fluoride (e.g. WF6) gas and a reducing gas (e.g. H2 gas) for reducing the material gas is supplied. During this process, an intermediate tungsten film forming process is implemented between a nucleus crystal film forming process for forming a tungsten nucleus crystal film on the surface of the substance to be treated and a main tungsten film forming process for forming a main tungsten film on the nucleus crystal film. The intermediate tungsten film forming process forms an intermediate tungsten film with a flow rate ratio of the material gas to the reducing gas kept below that in the main tungsten film forming process, thereby eliminating an incubation time T2 after the nucleus crystal film formation, increasing an overall average film forming speed, and improving a film thickness uniformity among substances to be treated.</p> |
