| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure analysis method of a film containing Ga, As, and at least, one type of element being different from Ga and As, and that of its surface oxide film. SOLUTION: At least, two types of films that contain Ga, As, and at least one type of element being different from the Ga and As and at the same time, have mutually different compositions and a surface oxide film being formed on the film are subjected to XPS(X-ray photoelectric spectral method) analysis, a substance with an orbital that is not essentially affected by a peripheral substance out of substances contained in the said film or surface oxide film is used as a reference substance, the peak position of the above mentioned orbital of the reference substance obtained from the XPS analysis is determined to be a reference peak position, other peak positions obtained by the XPS analysis are determined by the above mentioned reference peak position, and the relationship between the composition of the film and the peak position is expressed according to the determined peak position using a functional expression.</p> |
