首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
A process for producing an epitaxial bipolar power semiconductor device and an epitaxial bipolar power semiconductor device thereof
摘要
申请公布号
IN184356(B)
申请公布日期
2000.08.12
申请号
IN1994MA28419
申请日期
1994.04.11
申请人
GENERAL SEMICONDUCTOR, INC.
发明人
CHAN, JOSEPH, Y.;LATERZA LARRY;GARBIS DENNIS;EINTHOVEN, WILLEM, G.
分类号
C30B23/00;H01L21/20;H01L21/30;(IPC1-7):C30B23/00
主分类号
C30B23/00
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Anti-climbing device for railway carriages
Laser driving circuit
Ball grid array (BGA) connection system and related method and ball socket
Adjusting apparatus for a pneumatically actuated disc brake
Polyolefin blends and pipe
Toner compositions and processes
Iodizing agent and process for preparation thereof
Method of imaging radiation from an object on a detection device and an inspection device for inspecting an object
Method and apparatus for measuring fiber orientation of a moving web
System and method for using generic comparators with firmware interface to assist video/audio decoders in achieving frame sync
Method and apparatus for distributing digitized streaming video over a network
Continuous closed-circuit desalination apparatus without containers
Methods of recording voice signals in a mobile set
Optical systems and refractive index-matching compositions
System for organizing knowledge data and communication with users having affinity to knowledge data
High power and high brightness diode-laser array for material processing applications
Scanning ladar with adjustable operational parameters
Transgenic plants containing ligninase and cellulase which degrade lignin and cellulose to fermentable sugars
Device for receiving functional elements
Seat apparatus
