发明名称 READ-OUT CIRCUIT FOR NON-VOLATILE MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To increase operation processing speed of an one chip microcomputer. SOLUTION: This circuit has arrangement in which addresses of two bytes unit are allotted alternately for flash memories L, R and addresses can be read out with 64 bytes unit. When the last 2 bytes of even numbered or odd numbered large block in the flash memory R are read out, and the beginning 2 bytes of even numbered or odd numbered large block directly after the odd numbered or even numbered block in the flash memory L are read out, an address circuit ADSINC outputs upper 9 bits XADL 9-1 as +1 increment, reverses a FAL7, and supplies it to an address circuit CROSS.</p>
申请公布号 JP2000228099(A) 申请公布日期 2000.08.15
申请号 JP19990027480 申请日期 1999.02.04
申请人 SANYO ELECTRIC CO LTD 发明人 HODAKA KAZUO
分类号 G11C16/06;G06F15/78;(IPC1-7):G11C16/06 主分类号 G11C16/06
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