METHOD FOR MANUFACTURING CATHODE IN PLASMA ETCHING DEVICE AND CATHODE THEREBY

摘要

PURPOSE: A method for manufacturing a cathode in a plasma etching device and a cathode thereby are provided to remove the remaining projections of a hole by using a potassium hydroxide. CONSTITUTION: A method for manufacturing a cathode in a plasma etching device and a cathode thereby comprise the steps of a hole forming process, a physical surface polishing process, and a chemical surface polishing process. The hole forming process enable a plurality of hole on a substrate in order to perform an inflow process of a gas to an etching chamber. The physical surface polishing process is to polish a surface of a silicon substrate by using a slurry. The chemical surface polishing process is to remove the remaining projections from an inner face and an outer face of the hole by using a potassium hydroxide.