GROUP III NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor device having a P-side electrode constituted of an Ni layer in which peeling is not generated on an SiO2 layer when wire bonding is performed. SOLUTION: In a group III nitride semiconductor device, a patterned SiO2 layer 8 is formed on P-type group III nitride semiconductor, and Ni layer 9a is formed on the P-type group nitride semiconductor and the SiO2 layer and made a P-side electrode. A Ti layer 9c is interposed between the Ni layer and the SiO2 layer. This device has a substrate 1 and group III nitride semiconductor layers 2-7.