Integrated device with monolithically formed light emitting element and external modulator/light receiving element

摘要

A GCL (50) is formed on a first major surface of a semi-insulating InP substrate (1''). Specifically, an InGaAsP active layer (2), an InGaAsP waveguide path (3) and a striped grating (10) having two phase shift portions are formed on the first major surface of the InP substrate (1''). An EA modulator (60) is formed on a second major surface of the semi-insulating InP substrate (1''). Specifically, a p-InP layer (7), an MQW structure (8) of 100-layer, an n<->-InP layer (9) and an n<+>-InP layer (10) are formed on the second major surface of the InP substrate (1''). The first major surface and second major surface of the InP substrate (1'') are inclined to each other by a few degrees.