| 摘要 |
PROBLEM TO BE SOLVED: To permit dry photolithography by which a film having high photosensitivity and high stability is formed by forming a layer of a stable plasma polymer of an organosilane using trimethylsilane or another compound having a high carbon to silicon ratio as a precursor. SOLUTION: Trimethylsilane is allowed to flow into a processing chamber containing a substrate, plasma is generated from the trimethylsilane and a layer of a plasma polymer of trimethylsilane is formed on the substrate. Part of the layer is selected and exposed in an oxidizing atmosphere, at least part of the selected part of the layer is oxidized, and exposed and unexposed parts are formed. The layer is then developed by an etching process to selectively remove the exposed or unexposed part. Light for the exposure preferably has a wavelength of about <=248 nm. The etching process is preferably carried out using plasma with oxygen and halogen. |
