| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a low roughness and high resolution pattern with high sensitivity by irradiating with electron beams a resist material containing a specified low molecular compound containing a functional group which causes a chain cleavage reaction in the presence of an acid, an acid generating agent and a solvent which dissolves the compounds. SOLUTION: A resist material containing a low molecular organic compound of the formula containing a functional group which cleaves in the presence of an acid, an acid generating agent and a solvent which dissolves the compounds is irradiated with electron beams. Though the molecular weight of the compound of the formula is as low as about 700, which is much smaller than that of a high polymer, the compound easily forms an amorphous thin film which functions wall as a resist material by coating a solution containing the compound. The compound withstands heat treatment in a lithiographic step because it has about 70 deg.C glass transition temperature. Diphenyl iodonium trifluoromethane sulfonate is preferably contained as the acid generating agent. Tetrahydrofuran may be used as the solvent. |
