LINE PATTERN COLLAPSE MITIGATION THROUGH GAP-FILL MATERIAL APPLICATION

摘要

Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

主权项

1. A chemical composition of a gap-fill treatment liquid comprising:
at least one polymer compound from the group consisting of poly(phthalaldehyde), poly(succinaldehyde), poly(allyl alcohol), poly(glyoxylic acid), poly(methyl glyoxylic acid), a polymeric salt of poly(methyl glyoxylic acid), poly(ethyl glyoxylic acid), a polymeric salt of poly(ethyl glyoxylic acid), poly(methyl glyoxylate), and poly(ethyl glyoxylate), wherein the gap-fill treatment liquid depolymerizes into volatile compounds on exposure to at least one depolymerizing agent from the group consisting of heat, electromagnetic radiation, and a catalyst.