发明名称 Halvledarelement
摘要 A semiconductor element includes an insulating outer layer that includes electric contact connections of a first conductive type. These connections are connected to contact areas located beneath the insulating surface layer, of which connections at least one is of a first conductive type. At least one of the contact areas and a further area that includes two layers of mutually different conductive types disposed between the contact areas, are covered by a layer of a second conductive type of material. This second layer is, in turn, covered with an insulating layer on at least that side which lies distal from the surface layer.
申请公布号 SE9901575(L) 申请公布日期 2000.11.04
申请号 SE19990001575 申请日期 1999.05.03
申请人 发明人
分类号 H01L21/762;H01L21/76;H01L27/12;H01L29/06;H01L29/786;(IPC1-7):H01L29/08;H01L29/735;H01L29/78 主分类号 H01L21/762
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