发明名称 |
MULTILEVEL DRAM WITH LOCAL REFERENCE GENERATION |
摘要 |
A dynamic random access memory for storing one of N levels in each of a plurality of memory cells, the memory cells having storage capacitors coupled to bitline pairs through switches for writing and reading data to and from the memory cells, the memory comprising: at least N-1 bitline pairs, each bitline pair being divided into N1 sub-bitlines by first switches therebetween; the sub-bitline pairs of each bitline being coupled to adjacent sub-bitline pairs by second switches therebetween, to form N-1 groups of sub-bitlines each for producing one of N-1 reference voltages; sense amplifiers coupled to each sub-bitline pair; N-1 sub-bitline pairs each having reference cells for selective coupling thereto; (N-2)(N-1) sub-bitline pairs each having generate cells for selective coupling thereto; and sub-bitline pairs being selectively connected in a group through switches such that: the sub-bitlines in the group are precharged to one of a plurality of voltages; one of the (N-1) reference voltages is generated by shorting together sub-bitlines in the group; and the reference voltage is stored in a reference cell in one of the bit-line pairs in the group.
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申请公布号 |
CA2273122(A1) |
申请公布日期 |
2000.11.26 |
申请号 |
CA19992273122 |
申请日期 |
1999.05.26 |
申请人 |
COCKBURN, BRUCE F.;BIRK, GERSHOM;ELLIOTT, DUNCAN G. |
发明人 |
COCKBURN, BRUCE F.;BIRK, GERSHOM;ELLIOTT, DUNCAN G. |
分类号 |
G11C11/401;G11C11/56;(IPC1-7):H01L27/108 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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