| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a semiconductor light emitting element which can increase an external quantization efficiency indicative of a rate of light externally extracted while maintaining an internal quantum efficiency high as a light emission efficiency of a luminous layer, by increasing the purity of wavelength of light emitted from the layer and by enhancing its crystallization. SOLUTION: The element is formed by joining a substrate 1 of transparent material to wavelengths of emitted light and a luminous layer formation part 9 of, e.g. InGaAlP compound semiconductor by a filter layer part 12, the substrate 1 being provided with a filter layer 12 having a luminous layer, e.g. on its surface for transmission of wavelengths of light emitted from the luminous layer, the luminous layer formation part 9 having laminated (n) and (p) type layers 2 and 4 and forming the luminous layer.</p> |
