摘要 |
<p>PROBLEM TO BE SOLVED: To provide a bump structure in a semiconductor chip, for which bump structure has an area equivalent to the case of a bump formed by a plating method, when a bump is formed by using a wire bonding method. SOLUTION: A metal ball is formed on the tip of a metal wire. After the metal ball is bonded to a semiconductor chip, the metal wire is cut while leaving the metal ball, and a metal bump is formed on the semiconductor chip, thus forming a bump structure. In this case, a flattened bump (a gold ball) 1 with the cut part side of the metal ball 12a flattened is formed.</p> |