| 发明名称 | Optical semiconductor device | ||
| 摘要 | An optical semiconductor device includes a substrate that has a silver plating layer formed on a surface, a light emitting diode that is bonded to the silver plating layer, a light reflecting portion that surrounds the light emitting diode, a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode, and a clay film that covers the silver plating layer. The transparent sealing portion and the light reflecting portion are bonded to each other. | ||
| 申请公布号 | US9525114(B2) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201314405946 | 申请日期 | 2013.06.06 |
| 申请人 | HITACHI CHEMICAL COMPANY, LTD. | 发明人 | Higashiuchi Tomoko;Takane Nobuaki;Yamaura Masashi;Inada Maki;Yokota Hiroshi |
| 分类号 | H01L33/00;H01L33/60;H01L33/62;H01L33/48;H01L33/56;H01L33/44;H01L33/54 | 主分类号 | H01L33/00 |
| 代理机构 | Fitch, Even, Tabin & Flannery LLP | 代理人 | Fitch, Even, Tabin & Flannery LLP |
| 主权项 | 1. An optical semiconductor device comprising: a substrate that has a silver plating layer formed on a surface; a light emitting diode that is bonded to the silver plating layer; a light reflecting portion that surrounds the light emitting diode; a transparent sealing portion that is filled into the light reflecting portion and seals the light emitting diode; and a clay film that coats the silver plating layer, wherein a thickness of the clay film is 0.05 μm to 1 μm, and wherein the transparent sealing portion and the light reflecting portion are bonded to each other. | ||
| 地址 | Chiyoda-Ku, Tokyo JP | ||