Method for forming integrated circuits on a strained semiconductor substrate

摘要

An electronic circuit on a strained semiconductor substrate, includes: electronic components on a first surface of a semiconductor substrate; and at least portions of a layer of a porous semiconductor material on the side of a second surface of the semiconductor substrate, opposite to the first surface, to bend the semiconductor substrate.

主权项

1. A strained integrated device structure comprising:
integrated devices formed at a first surface of a semiconductor substrate; a semiconductor support including a first surface, a second surface, porous semiconductor material formed at the first surface of the semiconductor support, and a region of nonporous semiconductor material positioned within the semiconductor support and between the porous semiconductor material and a bottom of the integrated devices, wherein the semiconductor support is bonded to a second surface of the semiconductor substrate and the semiconductor substrate includes a region of strained semiconductor located between the porous semiconductor material and the integrated devices, wherein the porous semiconductor material is formed as a plurality of islands separated by regions of non-porous semiconductor material.