Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess

摘要

An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.

主权项

1. A semiconductor device comprising:
a substrate; a fin disposed on the substrate to extend in a first direction; a trench disposed on the fin, wherein the trench is arranged in a straight line along a second direction crossing the first direction; a gate structure crossing the fin in the first direction; a spacer disposed on sidewalls of the gate structure; a source/drain region disposed in the trench, on at least one side of the gate structure to be disposed in the fin and including a first recess, a bottom surface of the first recess is nearer to a top surface of the substrate than a top surface of the fin; and a silicide layer filling the first recess.