| 发明名称 | Semiconductor device and method for forming the same | ||
| 摘要 | A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes a polysilicon electrode, an insulating layer disposed on the polysilicon electrode, and a metal electrode disposed on the insulating layer. A method for forming the semiconductor device is also disclosed. | ||
| 申请公布号 | US9525020(B2) | 申请公布日期 | 2016.12.20 |
| 申请号 | US201414249945 | 申请日期 | 2014.04.10 |
| 申请人 | VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION | 发明人 | Lao Chung-Ren;Liu Hsing-Chao;Wu Tzung-Hsian;Huang Chih-Jen |
| 分类号 | H01L27/108;H01L49/02;H01L27/06;H01L21/28;H01L29/49;H01L29/66 | 主分类号 | H01L27/108 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A semiconductor device, comprising: a substrate having an isolation structure therein; a capacitor disposed on the isolation structure and comprising: a polysilicon electrode;an insulating layer disposed on the polysilicon electrode; anda metal electrode disposed on the insulating layer; a polysilicon layer disposed on the isolation structure; and a resistor disposed on the polysilicon layer and comprising an another metal electrode, wherein the insulating layer extends between the another metal electrode and the polysilicon layer, and a top surface of the polysilicon electrode is below a bottom surface of the another metal electrode over the insulating layer. | ||
| 地址 | Hsinchu TW | ||