发明名称 Line layout and method of spacer self-aligned quadruple patterning for the same
摘要 A line layout and a spacer self-aligned quadruple patterning method thereof are provided. The line layout includes a first line, a second line, a third line, and a fourth line. The second line and the third line are disposed between the first line and the fourth line. The first line, the second line, the third line, and the fourth line respectively extend in a first direction. An end segment of the second line and an end segment of the third line respectively include a first protrusion portions that extend in a second direction. The first protrusion portion of the end segment of the second line protrudes toward the first line. The first protrusion portion of the end segment of the third line protrudes toward the fourth line.
申请公布号 US9524878(B2) 申请公布日期 2016.12.20
申请号 US201414505131 申请日期 2014.10.02
申请人 MACRONIX International Co., Ltd. 发明人 Peng Chi-Sheng
分类号 H01L21/311;H01L23/544;H01L21/768;H01L21/033;H01L23/528 主分类号 H01L21/311
代理机构 J.C. Patents 代理人 J.C. Patents
主权项 1. A line layout, comprising: a first line, a second line, a third line, and a fourth line respectively extending in a first direction, wherein the second line and the third line are disposed between the first line and the fourth line; and a plurality of pads, respectively connected with an end segment of the first line, an end segment of the second line, an end segment of the third line, and an end segment of the fourth line, wherein the end segment of the second line and the end segment of the third line respectively comprise a first protrusion portion that extend in a second direction, wherein the first protrusion portion of the end segment of the second line protrudes toward the first line; and the first protrusion portion of the end segment of the third line protrudes toward the fourth line, wherein the end segment of the first line, the end segment of the second line, the end segment of the third line, and the end segment of the fourth line respectively comprise a first stepped shape, a second stepped shape, a third stepped shape, and a fourth stepped shape, in which a number of turns of the second stepped shape is less than a number of turns of the first stepped shape and the fourth stepped shape, and a number of turns of the third stepped shape is less than the number of turns of the first stepped shape and the fourth stepped shape, wherein the first line, the second line, the third line, and the fourth line are derived from a single core space, and a region covered by the core space is located between the first line and the fourth line, and overlaps with the second line and the third line.
地址 Hsinchu TW