发明名称 MOUNTING STRUCTURE OF SEMICONDUCTOR FACEDOWN AND MOUNTING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To provide a mounting structure of semiconductor facedown and a mounting method therefor, in which efficient heat release is realized to prevent deterioration and breakdown of properties due to heating. SOLUTION: An electrical connection structure, where a signal electrode placed on an outer periphery of a drive IC 1 and a wiring pattern of a base printed board 10 of superior thermal conductivity are connected with an electrode bump containing Sn/Pb eutectic solder, is formed. A heat release structure where a heat release electrode that is placed on a transistor element, constituting the drive IC 1, with an insulating layer in between is connected to the part where the base of superior thermal conductivity of the base printed board 10 of superior thermal conductivity is exposed, with a heat release bump 5 containing In solder, is formed. The heat release bump 5 containing the solder is formed on the heat release electrode of the drive IC 1, and further a structure where the electrode bump 5 containing Sn/Pb eutectic solder is formed on an Au-plated base-exposed part of superior thermal conductivity of the base printed board 10 of superior thermal conductivity, is formed.</p>
申请公布号 JP2000340610(A) 申请公布日期 2000.12.08
申请号 JP19990149856 申请日期 1999.05.28
申请人 NEC CORP 发明人 KANEKO HIDEKI
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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