| 摘要 |
<p>The invention relates to a semiconductor device with a semiconductor body which is provided at a surface with a programmable and electrically erasable non-volatile memory comprising a matrix of memory cells which each comprise a field effect transistor with floating gate. A device according to the invention is characterized in that each memory cell comprises a select transistor T2 which is connected in series with the floating gate transistor T1, in that the memory cells form a matrix of the NOR type, and in that the select transistor is connected to the source of the floating-gate transistor, while both writing and erasing are carried out on the basis of the Fowler-Nordheim tunneling mechanism.</p> |
