发明名称 |
Nonvolatile semiconductor memory device comprising a memory transistor, a select transistor, and an intermediate diffusion layer |
摘要 |
A memory transistor and a select transistor are disposed side by side on a semiconductor substrate between source/drain diffusion layers thereof, with an intermediate diffusion layer interposed therebetween. The memory transistor includes: a gate insulating film having such a thickness as to allow tunneling current to pass therethrough; a floating gate electrode; an interelectrode insulating film; and a control gate electrode. The select transistor includes a gate insulating film and a select gate electrode. Tunneling current, allowing electrons to pass through the gate insulating film under the floating gate electrode, is utilized during the removal and injection of electrons from/into the floating gate electrode. As a result, higher reliability can be attained and rewriting can be performed at a lower voltage. Also, since the select transistor is provided, reading can also be performed at a lower voltage. Improvement of reliability and rewrite and read operations at respective lower voltages are realized for a nonvolatile semiconductor memory device, in which a memory cell includes a floating gate electrode and a control gate electrode.
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申请公布号 |
US6169307(B1) |
申请公布日期 |
2001.01.02 |
申请号 |
US19980206560 |
申请日期 |
1998.12.08 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
TAKAHASHI KEITA;DOI MASAFUMI;DOI HIROYUKI;TAMURA NOBUYUKI;OKUDA YASUSHI |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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