发明名称 |
Method of fabricating semiconductor device |
摘要 |
In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.
|
申请公布号 |
US6168996(B1) |
申请公布日期 |
2001.01.02 |
申请号 |
US19980137508 |
申请日期 |
1998.08.20 |
申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
NUMAZAWA SUMITO;NAKAZAWA YOSHITO;KOBAYASHI MASAYOSHI;KUDO SATOSHI;IMAI YASUO;KUBO SAKAE;SHIGEMATSU TAKASHI;OHNISHI AKIHIRO;UESAWA KOZO;OISHI KENTARO |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/51;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|