NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A nonvolatile semiconductor memory device is provided to improve a photolithography process within a memory cell array area. CONSTITUTION: A nonvolatile semiconductor memory device comprises a memory cell array consisting of first/second select transistors, a plurality of bit lines commonly connected to a drain of the transistors, and a plurality of word lines connected to a gate of the transistors. The gate(GS/L11) of the first select transistor shares the bit lines and drain, and has a structure into which a first polysilicon layer(106), an interlayer dielectric and second/third polysilicon layers(110,114) are stacked. A first gate contact window(10) consists of second/third polysilicon layers laminated in a dummy area transversely disposed to the bit lines. A second gate contact window(20) consists of second/third polysilicon layers laminated over a connected gate.