| 摘要 |
PROBLEM TO BE SOLVED: To highly accurately pattern a resist. SOLUTION: In a PEB unit 20, a PEB(post exposure baking) processing is applied to the resist formed on a substrate and exposed with a prescribed pattern. The PEB-processed resist is cleaned by a cleaning unit 30 so that the chemical reaction of the resist may be suppressed. The cleaned resist is developed by a developing unit 40. In order to successively apply processing after the PEB processing on the prescribed number of PEB-processed resists, besides, in order to prevent the resist from being left as it is, a PEB processing starting time is calculated based on the time of ending the processing executed after the PEB processing, then, the time is set in the PEB unit 20. After the substrate is carried from a post exposure standby unit 10, the PEB processing is started by the PEB unit 20 at the aforesaid start time. |
