| 摘要 |
<p>An exposure method and an exposure system capable of easily supplying a gas penetrating an exposure beam to between a substrate to be exposed and a projection optical system, wherein an exposure light (IL) passed through a pattern of a reticle (R) is applied onto a wafer (W) via a projection optical system (PL) consisting of a cata-dioptric system to thereby expose a reduced image of reticle (R) pattern onto the wafer (W), a purge guide sheet (33) formed with guide holes (33a) in the vicinity of the center of a visual field is disposed between an optical member (M2) at the tip end of the projection optical system (PL) and the wafer (W) to supply a purge gas penetrating the exposure light (IL) from a gas supply device (26) to a space between the optical member (M2) at the tip end and the purge guide sheet (33), and the purge gas flows down through guide holes (33a) toward the wafer (W) and then flows in an outer-circumferential direction.</p> |
