| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent an erroneous readout from being caused, even if the manufacturing process of a semiconductor storage device is varied and to enable obtaining stable readout characteristics of the device. SOLUTION: One pair of reference cells 77 and 78 are formed in the same structure as that of one pair of memory cells 51 and 52 and are arranged in the same direction on a semiconductor substrate. The source-drain directions of the cell 51 and the cell 77 (an even number of cells) are matched with each other, and the source-drain directions of the cell 52 and the cell 78 (an odd number of cells) coincide with each other. A 79 is a selector circuit for selecting the cells 77 and 78, where when the cell 51 is selected, the cell 77 is selected and when the cell 52 is selected, the cell 78 is selected.</p> |
