| 摘要 |
There is provided a capacitor employed in a MMIC and having a structure which is capable of increasing a capacitance of occupied areas of capacitor patterns and also reducing variation of a capacitance value in mass production. A substantial comb-type lower electrode 11 is formed on a substrate 14, then a dielectric layer 13 is formed on the lower electrode 11, and then a substantial comb-type upper electrode 12 is formed on the dielectric layer 13. Respective element electrodes 16 (15) of one of the lower electrode 11 and the upper electrode 12 are arranged in blank areas between respective element electrodes 15 (16) of the other of the lower electrode 11 and the upper electrode 12. <IMAGE> |
