MANUFACTURE OF GaN-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To attain effect of lower resistance and active dopant even in the case of a GaN-based semiconductor device manufactured by a gas source molecule beam epitaxial growth method by feeding a current to a p-type GaN-based semiconductor layer. SOLUTION: In the case of activating a p-type GaN-based semiconductor layer feeding current in the wafer condition, after the epitaxial structure forming a GaN-based field-effect transistor is formed, current is fed by forming a current feeding electrode at the upper and lower sides of the substrate. Since a Mg- doped p-type GaN layer as the object for low resistance is as thin as 200 nm, if the wafer is previously heated up to the temperature about 200 deg.C, the initial current of about 2 to 3 mA/mm2 can be obtained with an application voltage of about 5 V. When the voltage is applied continuously, the substrate temperature rises through resistance heating and the resistance is reduced through activation of Mg in the p-type GaN layer and the feed current increases. Thereby, extremely excellent low resistance effect can be attained.