| 摘要 |
<p>PROBLEM TO BE SOLVED: To fabricate an active matrix circuit without increasing the number of steps by forming a source line, a line on the extension thereof or an electrode covering a channel forming region thereby shielding the channel forming region from light. SOLUTION: A silicon oxide film 203 or a silicon nitride film is formed as an underlying film on the surface of a glass substrate 200 and a thin film semiconductor 201 is formed as an active layer 202 of crystallized semiconductor of a thin film transistor. A crystallized silicon semiconductor thin film is patterned with the size of the active layer of the thin film transistor. Subsequently, polysilicon doped with a metal, e.g. aluminum, or phosphorus is deposited and patterned to form a gate electrode 107. Source and drain regions 104, 106 are then implanted with phosphorus ions using the gate electrode 107 as a mask in order to convert then into N type. Thereafter, a silicon oxide film 107 is formed as an interlayer insulation film and patterned for boring and contact parts 108, 109 are formed by metallization. Finally, a source electrode line 112 is provided to cover a channel forming region 105.</p> |
