| 摘要 |
<p>PURPOSE: To increase the connecting area of a first layer of an electrode root to an electrode pad and an insulating film and to improve the strength of a bump electrode by increasing the diameter of the root made of a metal film or the first layer of the root larger than that of the electrode. CONSTITUTION: A barrier metal first layer 4 made of TiN, a barrier metal second layer 5 made of Ti having a diameter smaller than the diameter of the layer 4, an electrode substrate film 6 having the same diameter as that of the layer 5 made of Cu, an electrode 8 having the same diameter as that of the film 6 made of Cu and a solder bump 9 are sequentially laminated on an insulating film 3 made of SiN having a hole 3' which has a diameter smaller than that of an Al pad 2 at the position of the pad 2 to protect the pad 2 provided on a wiring for wiring an element, the wiring and the element on a wafer board 1, The diameter of the layer 4 is increased larger than that of the layer 5 to increase the connecting area of the pad 2 to the film 3 and the layer 4, thereby improving the strength of a bump electrode 10.</p> |
