| 摘要 |
PROBLEM TO BE SOLVED: To allow a high output by establishing a relationship expressed by a specific equation between the carrier concentration at a position away from, by a specified distance, the interface with a window layer toward a Ga1-xAlxAs layer and the thickness of a p-type layer of Ga1-xAlxAs layer. SOLUTION: Relations such as 10<(Lp)<30, 30<(Cp)×(Lp)<100 are established between the carrier concentration (Cp: unit 1017 cm-3) at a position separated by 2 μm, an interface between a Ga1-xAlxAs layer 4 and a window layer 3 toward the Ga1-xAlxAs layer 4 and the thickness (Lp: in units of 10-4 cm) of a p-type layer in the Ga1-xAlxAs layer 4. If parameters satisfy these relations, an epitaxial wafer constituting a light-emitting element of high output which is superior in forward voltage characteristics is provided. With the use of epitaxial wafer of this configuration, a light-emitting element of high output with a low forward voltage is provided. |
