| 摘要 |
<p>Radiation sensitive resins for use in a top layer resists in bilayer systems for use in deep UV photolithography comprises copolymers having structural units (I) and optionally (III), wherein n is an integer of 1 to 5, R1 is methyl or trimethylsiloxy, R2 is a tert-butyl group, R?3, R4 and R5¿ are each independently hydrogen or a methyl group.</p> |
