发明名称 SEMICONDUCTOR DEVICE
摘要 A small sized semiconductor device having high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region 2, plural first and second terminal electrodes 5 connected to the circuit region 3, and an insulation-separation region 4 for separating electrically the first terminal electrodes from the second terminal electrodes, and transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip 1, and the insulation-separation region 4 is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance. <IMAGE>
申请公布号 EP1089337(A1) 申请公布日期 2001.04.04
申请号 EP19990922620 申请日期 1999.05.31
申请人 HITACHI, LTD. 发明人 NEMOTO, MINEHIRO;KOJIMA, YASUYUKI;KANEKAWA, NOBUYASU;YUKUTAKE, SEIGOU;FURUKAWA, KATSUHIRO
分类号 H01L21/762;H01L23/495;H01L23/64 主分类号 H01L21/762
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