发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A small sized semiconductor device having high insulating performance between a primary side circuit and a secondary side circuit is realized. A circuit region 2, plural first and second terminal electrodes 5 connected to the circuit region 3, and an insulation-separation region 4 for separating electrically the first terminal electrodes from the second terminal electrodes, and transmitting signals between the first and the second terminal electrodes are formed onto a semiconductor chip 1, and the insulation-separation region 4 is provided between the first and second terminal electrodes. The interval between the first and the second terminal electrodes on the same semiconductor chip can be separated with high insulating performance. <IMAGE> |
申请公布号 |
EP1089337(A1) |
申请公布日期 |
2001.04.04 |
申请号 |
EP19990922620 |
申请日期 |
1999.05.31 |
申请人 |
HITACHI, LTD. |
发明人 |
NEMOTO, MINEHIRO;KOJIMA, YASUYUKI;KANEKAWA, NOBUYASU;YUKUTAKE, SEIGOU;FURUKAWA, KATSUHIRO |
分类号 |
H01L21/762;H01L23/495;H01L23/64 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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