发明名称 ATMOSPHERIC PROCESS AND SYSTEM FOR CONTROLLED AND RAPID REMOVAL OF POLYMERS FROM HIGH DEPTH TO WIDTH ASPECT RATIO HOLES
摘要 <p>A hot arc-type plasma generating system is described to etch a polymer (44) on a substrate (10) used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes (40), that can include trenches, greater than about 10 to 1 and even greater than 50 to 1.</p>
申请公布号 WO2001023130(A1) 申请公布日期 2001.04.05
申请号 US2000027113 申请日期 2000.09.28
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