Single crystal manufacturing apparatus has seed crystal pasting material provided at predetermined intervals from cover

摘要

The seed crystal pasting material (12b) is provided at preset interval (d) from the end face of cover (12a). The surface in which the pasting material is mounted exists so that a dent is formed from the surface of cover at which the pasting material is provided. The growth surface of seed crystal (5) is projected to surface of cover. The interval between seed crystal pasting material and end face of cover is <= 0.1 mm and <= 1 mm. A heat insulation material between seed crystal pasting material and container prevents heat transfer of porous graphite. The temperature of seed crystal growth surface is lower than that the surface temperature of container. The counterbore is provided in the reverse side of surface which attaches seed crystal among seed crystal pasting material. The crucible consists of carbon material and growth surface consists of silicon carbide. The pasting material is coated by refractory metal carbide which consists of hafnium carbide (HfC), tantalum carbide (TaC), zirconium carbide (ZrC) and titanium carbide (TiC). Seed crystal (5) is provided on the whole surface of crucible. The base of recess covers seed crystal. An Independent claim is also included for single crystal manufacturing method which involves passing raw material gas and inert gas of single crystal into growth space for growing seed crystal. Impurities chosen from the group nitrogen (N), boron (B), aluminum (Al), phosphorus (P) and arsenic (As) are mixed in the inert gas. The carbonization of seed crystal growth surface is grown into the growth space in crucible using silicon carbide.