发明名称 FIELD EFFECT TRANSISTOR (FET) AND FET CIRCUITRY
摘要 <p>A polymer-based or silicon-based accumulation type, depletion mode field effect transistor, suitable as a driver for load. Optionally, the load is another accumulation type, depletion mode field effect transistor. The transistor may be of the TFT type, either lateral or vertical. Optionally, it may have Schottky diode contacts to source and drain electrodes, possibly with a reverse biased Schottky junction, or it may have negatively charged gate dielectric.</p>
申请公布号 WO2001035500(A2) 申请公布日期 2001.05.17
申请号 GB2000004275 申请日期 2000.11.09
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