Memory device and method of manufacturing the same

摘要

A memory device is provided. A first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer are disposed on a first electrode layer in sequence to form a stacking structure. A dielectric layer is disposed on the first electrode layer and covers a sidewall of the stacking structure and part of a top surface of the second conductive layer. A second electrode layer is disposed on the dielectric layer and the second conductive layer. Barrier enhancing components are provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer. Further, a method of manufacturing a memory device is provided.

主权项

1. A method of manufacturing a memory device, comprising:
forming a first conductive layer, a first diffusion barrier layer, a phase change layer, a second diffusion barrier layer and a second conductive layer in sequence on a first electrode layer to form a stacking structure, providing a plurality of barrier enhancing components to the stacking structure, so that the barrier enhancing components are provided between a bottom surface of the first diffusion barrier layer and a top surface of the second diffusion barrier layer; forming a dielectric layer on the first electrode layer, wherein the dielectric layer covers a sidewall of the stacking structure and part of a top surface of the second conductive layer; and forming a second electrode layer on the dielectric layer and the second conductive layer, wherein the first diffusion barrier layer and the second diffusion barrier layer respectively comprise Ti, Ta, TiN, TaN or a combination thereof.