| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which is high in external quantum efficiency. SOLUTION: A compound semiconductor crystal substrate, composed of a XII (2B) element and a XVI (6B) element is used, a diffusion source, whose conductivity is different from that of the substrate is arranged on the surface of the substrate, a p-n junction is formed by the diffusion of impurities from the diffusion source, and an electrode is formed on each surface of the substrate for the formation of a photoelectric conversion device, where a recombination center of specific energy level that is localized in a forbidden band in the above p-n junction is generated by the diffusion of impurities, and electrons and holes are recombined through the intermediary of the recombination center, by which light is emitted. |
