| 发明名称 |
Laser irradiation aluminum doping for monocrystalline silicon substrates |
| 摘要 |
Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter, aluminum metal contacts are formed directly on a surface of a monocrystalline silicon substrate. The aluminum metal contact is selectively heated via laser irradiation, thereby causing the aluminum and a portion of the monocrystalline silicon substrate in proximity to the aluminum to reach a temperature sufficient to allow at least a portion of the silicon to dissolve in the aluminum. The aluminum and the portion of the monocrystalline silicon substrate in proximity to the aluminum is allowed to cool, thereby forming an aluminum-rich doped silicon layer on the monocrystalline silicon substrate. |
| 申请公布号 |
US9455362(B2) |
申请公布日期 |
2016.09.27 |
| 申请号 |
US201113340903 |
申请日期 |
2011.12.30 |
| 申请人 |
Solexel, Inc. |
发明人 |
Moslehi Mehrdad M.;Rana Virendra V.;Anbalagan Pranav |
| 分类号 |
H01L31/0236;H01L31/068;H01L21/225;H01L21/268;H01L31/0224;H01L31/072;H01L31/18 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
Wood John |
| 主权项 |
1. A method for making an aluminum doped p-type region in a silicon substrate, said method comprising:
forming an aluminum metal contact directly on a surface of a monocrystalline silicon substrate; selectively heating said aluminum metal contact via laser irradiation, thereby causing said aluminum and a portion of said monocrystalline silicon substrate in proximity to said aluminum to reach a temperature sufficient to allow at least a portion of said silicon to dissolve in said aluminum; and allowing said aluminum and said portion of said monocrystalline silicon substrate in proximity to said aluminum to cool, thereby forming an aluminum-rich doped silicon layer on said monocrystalline silicon substrate. |
| 地址 |
Milpitas CA US |
