Semiconductor device

摘要

An n−-type semiconductor substrate (1) includes an active region and a terminal region disposed outside the active region. A p+-type anode layer (2) is formed in a portion of an upper surface of the n−-type semiconductor substrate (1) in the active region. A plurality of p+-type guard ring layers (3) are formed in a portion of the upper surface of the n−-type semiconductor substrate (1) in the terminal region. An n+-type cathode layer (5) is formed in a lower surface of the n−-type semiconductor substrate (1). An anode electrode (6) is connected to the p+-type anode layer (2). A metallic cathode electrode (7) is connected to the n+-type cathode layer (5). A recess (8) is formed by trenching the n+-type cathode layer (5) in the terminal region. The cathode electrode (7) is also formed in the recess (8).

主权项

1. A semiconductor device comprising:
a substrate including an active region and a terminal region disposed outside the active region; a p+-type anode layer formed in a portion of an upper surface of the substrate in the active region; a plurality of p+-type guard ring layers formed in a portion of the upper surface of the substrate in the terminal region; an n+-type cathode layer formed in a lower surface of the substrate; an anode electrode connected to the p+-type anode layer; and a metallic cathode electrode connected to the n+-type cathode layer, wherein a recess is formed by completely removing the n+-type cathode layer in the terminal region, and the cathode electrode is also formed in the recess.