| 主权项 |
1. A semiconductor device, comprising:
a source and a drain region formed on a substrate; and a gate structure disposed on the substrate between the source and drain regions, the gate structure including:
a gate dielectric layer, wherein the gate dielectric includes a high-k dielectric material; anda metal gate electrode, wherein the metal gate electrode includes a tapered profile, the tapered profile being defined by a first sidewall and a second opposing sidewall, each of the first and second sidewalls including a first portion substantially perpendicular to a top surface of the substrate and a second portion overlying and oblique to the first portion, the second portion of the first and second sidewalls defining a first width of the metal gate electrode and the first portion defining a second width of the metal gate electrode, the first width greater than the second width and wherein the first and second portion connect at a connection point, and wherein the metal gate electrode includes:a first conductive layer having a top surface below the connection point; anda work function metal layer extending from below the connection point to above the connection point; spacer elements abutting the gate structure, wherein a sidewall of the spacer elements defines the tapered profile; and a first dielectric layer on the spacer elements having a top surface that extends from one of the spacer elements to an overlying second dielectric layer, wherein the top surface is substantially parallel a top surface of the substrate. |
