Three-dimensional electrostatic discharge semiconductor device

摘要

Three-dimensional electrostatic discharge (ESD) semiconductor devices are fabricated together with three-dimensional non-ESD semiconductor devices. For example, an ESD diode and FinFET are fabricated on the same bulk semiconductor substrate. A spacer merger technique is used in the ESD portion of a substrate to create double-width fins on which the ESD devices can be made larger to handle more current.

主权项

1. A method, comprising:
providing a semiconductor structure, the structure comprising a semiconductor substrate, a blanket layer of a protective material over the semiconductor substrate and a plurality of mandrels over the protective layer; creating merged spacers between the plurality of mandrels; removing the mandrels; etching to reduce a height of the merged spacers; etching the semiconductor substrate using the reduced height spacers as a hard mask to create raised semiconductor structures having a width at least equal to the merged spacers; and creating one or more ESD semiconductor devices at a top portion of at least one of the raised structures.