| 发明名称 |
III NITRIDE COMPOUND SEMICONDUCTOR ELEMENT |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To eliminate the warpage of the laminate of a substrate and a III nitride compound semiconductor layer. SOLUTION: The III nitride compound semiconductor layer having an element function is formed on the surface of a substrate layer formed in a textured structure.</p> |
| 申请公布号 |
JP2001168386(A) |
申请公布日期 |
2001.06.22 |
| 申请号 |
JP20000041222 |
申请日期 |
2000.02.18 |
| 申请人 |
TOYODA GOSEI CO LTD |
发明人 |
ITO JUN;SHIBATA NAOKI;SENDAI TOSHIAKI;SENDA MASANOBU;NOIRI SHIZUYO;ASAMI SHINYA;WATANABE HIROSHI |
| 分类号 |
H01L33/22;H01L33/32;H01S5/323 |
主分类号 |
H01L33/22 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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