| 摘要 |
PURPOSE: A method for forming a dual gate insulating layer of a semiconductor device in which a high power transistor and a normal transistor are integrated together on a single substrate is provided to prevent damage of the substrate during formation of the gate insulating layer and further to simplify a thickness control of the gate insulating layer. CONSTITUTION: In the method, the first gate insulating layer(204) having the first thickness is formed by thermal oxidation over an entire portion of the semiconductor substrate(200) where a normal transistor region(202) and a high power transistor region(203) are defined by an isolation region(201). Next, an oxidation barrier mask pattern(205a) such as a silicon nitride layer is formed only on the normal transistor region(202), and the second gate insulating layer(207) having the second thickness is formed by thermal oxidation on the first gate insulating layer(204) in the high power transistor region(203). After that, the oxidation barrier mask layer(205a) is removed.
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