发明名称 |
HALFTONE PHASE SHIFT MASK AND BLANK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask having a single layer film or multilayered film containing metals and silicon as the main structural elements on a glass substrate in such a manner that the latitude for the optical constants used for designing the film is large, that minute defects are hardly caused in the film after the film is formed and that the film has resistance against laser light. SOLUTION: The shift mask has a region containing a metal silicide produced by coupling a metal and silicon as the main structural element in the substances constituting the single layer film or multilayered film, and at least one of the metal not silicified and silicon not forming a compound with metal elements is incorporated into the aforementioned region.</p> |
申请公布号 |
JP2001183805(A) |
申请公布日期 |
2001.07.06 |
申请号 |
JP19990367670 |
申请日期 |
1999.12.24 |
申请人 |
TOPPAN PRINTING CO LTD |
发明人 |
HARAGUCHI TAKASHI;MATSUO TADASHI;FUKUHARA NOBUHIKO;KANAYAMA KOICHIRO |
分类号 |
H01L21/027;G03F1/32;G03F1/68;(IPC1-7):G03F1/08 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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