发明名称 HALFTONE PHASE SHIFT MASK AND BLANK
摘要 <p>PROBLEM TO BE SOLVED: To provide a halftone phase shift mask having a single layer film or multilayered film containing metals and silicon as the main structural elements on a glass substrate in such a manner that the latitude for the optical constants used for designing the film is large, that minute defects are hardly caused in the film after the film is formed and that the film has resistance against laser light. SOLUTION: The shift mask has a region containing a metal silicide produced by coupling a metal and silicon as the main structural element in the substances constituting the single layer film or multilayered film, and at least one of the metal not silicified and silicon not forming a compound with metal elements is incorporated into the aforementioned region.</p>
申请公布号 JP2001183805(A) 申请公布日期 2001.07.06
申请号 JP19990367670 申请日期 1999.12.24
申请人 TOPPAN PRINTING CO LTD 发明人 HARAGUCHI TAKASHI;MATSUO TADASHI;FUKUHARA NOBUHIKO;KANAYAMA KOICHIRO
分类号 H01L21/027;G03F1/32;G03F1/68;(IPC1-7):G03F1/08 主分类号 H01L21/027
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