| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress adhesion of polishing produced matters to a polishing head and form a uniform wiring layer with a high throughput, even in the case where a large amount of copper metal is polished in the polishing step. SOLUTION: This metal wiring formation method includes a step to form a recessed part in an insulation film formed on a board, a step for forming copper metal film entirely so as to embed the recessed part, and a step for polishing the copper metal film by the chemical mechanical polishing method. In the polishing step, a slurry for chemical and mechanical polishing containing a polishing material, an oxidizing agent and citric acid is used, and a polishing pad is brought into contact with the surface to be polished with a pressure of 27 kPa or higher.</p> |
