| 发明名称 |
SLURRY FOR CHEMICAL MECHANICAL POLISHING |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To inhibit the staining of polishing pads at CMP(chemical mechanical polishing) of copper metal films. SOLUTION: A slurry for chemical mechanical polishing containing as an essential component secondary particles made of primary particle aggregates comprisingθ-alumina, is used as an abrasive grain.</p> |
| 申请公布号 |
JP2001187880(A) |
申请公布日期 |
2001.07.10 |
| 申请号 |
JP19990374485 |
申请日期 |
1999.12.28 |
| 申请人 |
NEC CORP;TOKYO MAGNETIC PRINTING CO LTD |
发明人 |
TSUCHIYA YASUAKI;WAKE TOMOKO;ITAKURA TETSUYUKI;SAKURAI SHIN;AOYANAGI KENICHI |
| 分类号 |
B24B37/00;C09G1/02;C09K3/14;C23F3/04;C23F3/06;H01L21/304;H01L21/321;(IPC1-7):C09K3/14 |
主分类号 |
B24B37/00 |
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