发明名称 METHOD FOR FORMING A ZINC OXIDE LAYER AND METHOD FOR PRODUCING A PHOTOVOLTAIC DEVICE
摘要 Provided are a substrate with a zinc oxide layer, in which at least a zinc oxide layer is provided on a support substrate, wherein the zinc oxide layer comprises a zinc oxide layer having the c axis perpendicular to the support substrate and a zinc oxide layer having the c axis slantindicular to the support substrate in the order from the side of the support substrate; and a photovoltaic device in which a semiconductor layer is formed on the substrate with the zinc oxide layer. Thus provided is the inexpensive photovoltaic device with excellent reflective performance and optical confinement effect and with high photoelectric conversion efficiency.
申请公布号 US2001012569(A1) 申请公布日期 2001.08.09
申请号 US20010824041 申请日期 2001.04.03
申请人 ARAO KOZO;TAMURA HIDEO;TOYAMA NOBORU;SONODA YUICHI;MIYAMOTO YUSUKE 发明人 ARAO KOZO;TAMURA HIDEO;TOYAMA NOBORU;SONODA YUICHI;MIYAMOTO YUSUKE
分类号 C25D9/08;H01L31/0224;H01L31/0236;H01L31/052;H01L31/18;H01L31/20;(IPC1-7):B21D39/00 主分类号 C25D9/08
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