| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crystal silicon thin film semiconductor device, wherein polycrystalline silicon layer thin films can be easily combined so as to keep the device high in photoelectric conversion efficiency, an inexpensive board material can be used because a board temperature is low, a polycrystalline semiconductor thin film of comparatively large thickness can be formed in a short time, and the device can be lessened in cost and enhanced in quality. SOLUTION: A crystal silicon thin film semiconductor device is characterized by the fact that a first polycrystalline silicon layer 3, which is, at least, partially turned porous, is provided on a substrate 1, and a PN junction is formed in the first polycrystalline silicon layer 3 or between a second polycrystalline silicon layer 4B which is provided coming into contact with the first polycrystalline silicon layer 3 and a third polycrystalline silicon layer 5.</p> |
